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E AS ?
1 1 . 3 * BV DSS
2 1 . 3 * BV DSS ? V S
E AS :
Internal N-Channel MOSFET BV DSS :
The PI2161’s internal N -Channel MOSFET
breakdown voltage (BV DSS ) is rated for 60V at 25°C
and will degrade to 55.5V at -40°C, refer to Figure 11.
Drain to source voltage should not exceed BV DSS in
Where:
* * L PARASITIC * I PEAK
Avalanche energy
2
nominal operation. During a fast switching transient
the MOSFET can tolerate voltages higher than its
BV DSS :
MOSFET maximum rated voltage (60V)
BV DSS rating under avalanche conditions. Refer to the
Absolute Maximum Ratings table.
In load disconnect switch applications when the load
is shorted, a large current is sourced from the input
supply through the MOSFET. Depending on the input
impedance of the system and the parasitic
inductance, the current in the MOSFET may exceed
the source pulsed current rating (150A) just before the
PI2161 MOSFET is turned off.
Power dissipation:
In Load Disconnect Switch applications, the MOSFET
is on in steady state operation and the power
dissipation is derived from the total source current and
the on-state resistance of the MOSFET.
The PI2161 internal MOSFET power dissipation can
be calculated with the following equation:
Pd MOSFET ? Is 2 ? R DS ( on )
Where:
The peak current during an output short condition is
Is :
Source Current
calculated as follows, assuming that the output has
very low impedance and it is not a limiting factor:
Pd MOSFET :MOSFET power dissipation
R DS(on) : MOSFET on-state resistance
V D
I PEAK ?
Where:
I PEAK :
:
V D * t OC ? OFF
L PARASITIC
Peak current in PI2161 MOSFET before it is
turned off.
Input voltage or load voltage at D pin before
input short condition did occur.
Note: For the worst case condition, calculate with
maximum rated R DS(on) at the MOSFET maximum
operating junction temperature because R DS(on) is
temperature dependent. Refer to Figure 12 for
normalized R DS(on) values over temperature. The
PI2161 maximum R DS(on) at 25°C is 11mΩ and will
increase by 43% at 125°C junction temperature.
t OC ? OFF : Low Range Overcurrent Turn-off Time.
L PARASITIC : Circuit parasitic inductance
The high peak current during an output short and
before the MOSFET turns off, stores energy in the
circuit parasitic inductance, and as soon as the
The Junction Temperature rise is a function of power
dissipation and thermal resistance.
Trise ? R ? JA ? Pd MOSFET ? R ? JA ? Is 2 ? R DS ( on )
Where:
MOSFET turns off, the stored energy at the drain side
of the internal MOSFET will be released to produce a
voltage higher than the input voltage while the
R ? JA :
Junction-to-Ambient thermal resistance
(45°C/Watt)
R VO ? 150 K ? ?
MOSFET source is at ground. This event will create a
high voltage difference between the drain and source
of the MOSFET. The MOSFET will avalanche, but
this avalanche will not affect the MOSFET
performance because the PI2161 has a fast
response time to the input fault condition and the
stored energy will be well below the MOSFET
avalanche capability .
MOSFET avalanche energy during an output short
event is calculated as follows:
This calculation may require iteration to get to the final
junction temperature. Figure 14 and Figure 16 show
the PI2161 internal MOSFET final junction
temperature curves versus conducted current at
maximum R DS(on) , given ambient temperatures and air
flow.
Load Status Resistor Selection: (R VO )
R VO can be calculated using the following equation:
VO
V SH ? VO
Picor Corporation ? pi corpower.com
PI2161
Rev 1.1 , Page 13 of 18
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